HT Semiconductor m8550 free download

File name m8550.pdf

M8 550 TRANSISTOR(PNP) FEATURES SOT-23 Power dissipation MARKING: Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -6 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 A Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 A hFE(1) VCE=-1V, IC=-5mA 45 DC current gain hFE(2) VCE=-1V, IC=-100mA 85 300 hFE(3) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC= -800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V VCE=-6V, IC= -20mA Transition frequency fT 150 MHz f=30MHz * Pulse Test :pulse width 300